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Beilstein J. Nanotechnol. 2014, 5, 2179–2191, doi:10.3762/bjnano.5.227
Figure 1: Examples of different back-gated device architectures employed for carbon nanotube field-effect tra...
Figure 2: Effects of NO2 adsorption on unpassivated nanotube transistors. a) Measurements from Kong et al. [7] s...
Figure 3: Theoretically calculated adsorption energies for various NOx–CNT systems. The calculations show wid...
Figure 4: Response of contact-passivated, pristine suspended carbon nanotube gas sensors. a) Transient respon...
Figure 5: Hysteretic effects in carbon nanotubes lying on a substrate, as shown by Kim et al. [58] (a, b): a) A C...
Figure 6: Pulsed gate sweep strategies to eliminate hysteresis in CNFETs [64]. a) Pulsed (p++) gate sweeps show a...
Figure 7: Hysteresis-free transistors using ultraclean, suspended carbon nanotubes. Gate sweeps for a suspend...
Figure 8: Drift suppression in suspended carbon nanotubes a) suspended carbon nanotube transistor and b) subs...
Figure 9: Reduction of 1/f noise in suspended CNFETs. a) The results from Lin et al. [23] show a 10-fold decrease...